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| VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO JK IC25 = 42.5 A VCES = 600 V VCE(sat) typ. = 2.4 V VII OP9 VID IK10 VDI AC1 L9 X13 GH10 SV18 X15 L9 NTC X15 T16 NTC AC1 E2 A S LN NTC L9 X15 F1 X16 PS18 B3 Pin arangement see outlines K10 VX18 X16 IK10 X16 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 33 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 33 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 600 20 42.5 29 60 VCES 10 130 s W V V A A A Features * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages * space and weight savings * reduced protection circuits * leads with expansion bend for stress relief Typical Applications * AC and DC motor control * AC servo and robot drives * power supplies * welding inverters Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.4 2.9 4.5 2.9 6.5 0.6 1.7 100 50 50 270 40 1.4 1.0 16 1.92 V V V mA mA nA ns ns ns ns mJ mJ nF 0.96 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-4 303 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = 400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) VII Maximum Ratings 30 19 A A Characteristic Values min. typ. max. 2.57 1.8 7 50 4.6 2.84 V V A ns 2.3 K/W K/W B3 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight VID IISOL 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K VIO Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g VDI Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-4 303 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 90 A 75 IC 90 A 75 VGE= 17V 15V 13V IC 60 TJ = 25C 11V 60 45 30 15 0 0 VGE = 17 V 15 V 13 V 11V 45 30 TJ = 125C 9V 25T60 9V 15 0 25T60 1 2 3 4 VCE 5 V 6 0 1 2 3 4 VCE 5V 6 B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 75 A IC VCE = 20V 90 A 75 IF 60 45 TJ = 125C TJ = 25C 60 45 30 TJ = 125C TJ = 25C 30 15 25T60 15 0 4 6 8 10 12 VGE 0 25T60 14 V 16 0,0 0,5 1,0 VF 1,5 V 2,0 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A IRM 20 V 150 120 ns 90 TJ = 125C VR = 300 V IF = 30 A IRM 15 VGE trr trr 30 10 VCE = 300 V IC = 30 A 20 10 25T60 60 30 MUBW3006A7 5 0 0 40 80 120 nC QG 0 0 200 400 600 -di/dt 0 160 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 303 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 3-4 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 8 VCE = 300V mJ VGE = 15V 80 tr td(on) Eon ns 60 t 40 Eoff 2,0 mJ Eoff 400 ns 300 Eon R = 33 6G TVJ = 125C 1,5 VCE = 300V VGE = 15V t td(off) 200 4 1,0 RG = 33 TVJ = 125C 2 20 0,5 tf 100 0 0 20 40 IC 25T60 0 0,0 0 20 40 IC 25T60 0 60 A 60 A B3 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 80 ns Eon VCE = 300V mJ VGE = 15V IC = 30A 3 T = 125C VJ 4 td(on) 2,0 VCE = 300 V mJ V = 15 V GE IC = 30 A 1,5 TVJ = 125C 400 td(off) ns 300 Eoff t tr Eon 60 t Eoff 2 1,0 40 200 1 0,5 tf 100 0 0 10 20 30 40 50 RG 25T60 60 70 80 20 0,0 0 10 20 30 40 50 RG 25T60 60 70 80 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W ZthJC 1 IGBT diode 80 A ICM 60 0,1 40 0,01 20 RG = 33 TVJ = 125C single pulse 0,001 25T60 0 0 100 200 300 400 500 600 VCE 700 V 0,0001 0,00001 0,0001 0,001 VDI...50-06P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 4-4 303 |
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